inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK539 description drain current C i d =5a@ t c =25 drain source voltage- : v dss =900v(min) fast switching speed applications designed especially for high voltage,high speed applications, such as off-line switching power supplies , ups,ac and dc motor controls,relay and solenoid drivers. absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 900 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 5 a p tot total dissipation@tc=25 150 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK539 electrical characteristics (t c =25 ) symbol parameter conditions min typ. max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 10ma 900 v v gs(th) gate threshold voltage v ds = 10v; i d = 1ma 1.5 3.5 v r ds(on) drain-source on-stage resistance v gs = 10v; i d =3a 1.7 2.5 v ds( on ) drain-source saturation voltage i f = 5a; v gs = 10v 11 13 v i gss gate source leakage current v gs = 20v; v ds = 0 100 na i dss zero gate voltage drain current v ds =900v; v gs = 0 300 ua tr rise time v gs =10v;i d =3a; r l =50 110 220 ns ton turn-on time 130 260 ns tf fall time 90 260 ns toff turn-off time 480 900 ns pdf pdffactory pro www.fineprint.cn
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